Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism

Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism

This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on tria...

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Main Authors: Zhang, Junbin, Syamal, Binit, Zhou, Xing, Chiah, Siau Ben, Zhou, Hongtao, Yuan, Li
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/101083
http://hdl.handle.net/10220/16311
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1010832020-03-07T13:24:50Z Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism Zhang, Junbin Syamal, Binit Zhou, Xing Chiah, Siau Ben Zhou, Hongtao Yuan, Li School of Electrical and Electronic Engineering IEEE International Conference on Solid-State and Integrated Circuit Technology (11th : 2012 : Xi'an, China) DRNTU::Engineering::Electrical and electronic engineering This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on triangular well approximation and surface-potential based DD transport, a CM for generic metal-insulator-semiconductor (MIS) HEMTs can be developed, which is scalable over device physical and structural parameters. 2013-10-10T01:13:30Z 2019-12-06T20:33:11Z 2013-10-10T01:13:30Z 2019-12-06T20:33:11Z 2012 2012 Conference Paper Zhou, X., Zhang, J., Syamal, B., Chiah, S. B., Zhou, H., & Yuan, L. (2012). Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-4. https://hdl.handle.net/10356/101083 http://hdl.handle.net/10220/16311 10.1109/ICSICT.2012.6467682 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Zhang, Junbin
Syamal, Binit
Zhou, Xing
Chiah, Siau Ben
Zhou, Hongtao
Yuan, Li
Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
description This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on triangular well approximation and surface-potential based DD transport, a CM for generic metal-insulator-semiconductor (MIS) HEMTs can be developed, which is scalable over device physical and structural parameters.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhang, Junbin
Syamal, Binit
Zhou, Xing
Chiah, Siau Ben
Zhou, Hongtao
Yuan, Li
format Conference or Workshop Item
author Zhang, Junbin
Syamal, Binit
Zhou, Xing
Chiah, Siau Ben
Zhou, Hongtao
Yuan, Li
author_sort Zhang, Junbin
title Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
title_short Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
title_full Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
title_fullStr Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
title_full_unstemmed Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
title_sort unified regional modeling of gan hemts with the 2deg and dd formalism
publishDate 2013
url https://hdl.handle.net/10356/101083
http://hdl.handle.net/10220/16311
_version_ 1681042448872112128

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