Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism

• المؤلفون الرئيسيون: Zhang, Junbin, Syamal, Binit, Zhou, Xing, Chiah, Siau Ben, Zhou, Hongtao, Yuan, Li
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101083; http://hdl.handle.net/10220/16311

This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on tria...