Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on tria...
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Main Authors: | Zhang, Junbin, Syamal, Binit, Zhou, Xing, Chiah, Siau Ben, Zhou, Hongtao, Yuan, Li |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/101083 http://hdl.handle.net/10220/16311 |
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Institution: | Nanyang Technological University |
Language: | English |
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