Prediction of overshoot and crosstalk of low-voltage GaN HEMT using analytical model

• Main Authors: Wu, Yingzhe, Yin, Shan, Dong, Minghai, Jin, Shoudong, Li, Hui, Cheng, Yuhua, See, Kye Yak
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering; Fast Switching; High Electron-Mobility Transistors
• Online Access: https://hdl.handle.net/10356/163027
• Institution: Nanyang Technological University

Ultra-fast switching speed and low switching loss of the gallium nitride high electron mobility transistors enable the realisation of high power density converter with excellent conversion efficiency. However, the rapid switching transition leads to significant overshoot and crosstalk issues that ca...