An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances

An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances

10.1109/TMTT.2021.3076064

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Bibliographic Details
Main Authors: Wenrui Hu, Haorui Luo, Xu Yan, Yong-Xin Guo
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2021
Subjects:
Charge model
GaN high electron mobility transistors (HEMTs)
Large-signal model
Neural network
Outlier detection
Online Access:https://scholarbank.nus.edu.sg/handle/10635/191232
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/191232

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