An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances

• Main Authors: Wenrui Hu, Haorui Luo, Xu Yan, Yong-Xin Guo
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE) 2021
• Subjects: Charge model; GaN high electron mobility transistors (HEMTs); Large-signal model; Neural network; Outlier detection
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/191232
• Institution: National University of Singapore

10.1109/TMTT.2021.3076064