An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances

10.1109/TMTT.2021.3076064

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Bibliographic Details
Main Authors:	Wenrui Hu, Haorui Luo, Xu Yan, Yong-Xin Guo
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Language:	English
Published:	Institute of Electrical and Electronics Engineers (IEEE) 2021
Subjects:	Charge model GaN high electron mobility transistors (HEMTs) Large-signal model Neural network Outlier detection
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/191232
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-191232
record_format	dspace
spelling	sg-nus-scholar.10635-1912322024-04-25T03:34:48Z An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances Wenrui Hu Haorui Luo Xu Yan Yong-Xin Guo ELECTRICAL AND COMPUTER ENGINEERING Charge model GaN high electron mobility transistors (HEMTs) Large-signal model Neural network Outlier detection 10.1109/TMTT.2021.3076064 IEEE Transactions on Microwave Theory and Techniques 2021-05-14T09:31:39Z 2021-05-14T09:31:39Z 2021 Article Wenrui Hu, Haorui Luo, Xu Yan, Yong-Xin Guo (2021). An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances. IEEE Transactions on Microwave Theory and Techniques. ScholarBank@NUS Repository. https://doi.org/10.1109/TMTT.2021.3076064 00189480 https://scholarbank.nus.edu.sg/handle/10635/191232 en Institute of Electrical and Electronics Engineers (IEEE)
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Charge model GaN high electron mobility transistors (HEMTs) Large-signal model Neural network Outlier detection
spellingShingle	Charge model GaN high electron mobility transistors (HEMTs) Large-signal model Neural network Outlier detection Wenrui Hu Haorui Luo Xu Yan Yong-Xin Guo An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
description	10.1109/TMTT.2021.3076064
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Wenrui Hu Haorui Luo Xu Yan Yong-Xin Guo
format	Article
author	Wenrui Hu Haorui Luo Xu Yan Yong-Xin Guo
author_sort	Wenrui Hu
title	An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
title_short	An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
title_full	An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
title_fullStr	An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
title_full_unstemmed	An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
title_sort	accurate neural network-based consistent gate charge model for gan hemts by refining intrinsic capacitances
publisher	Institute of Electrical and Electronics Engineers (IEEE)
publishDate	2021
url	https://scholarbank.nus.edu.sg/handle/10635/191232
_version_	1800914806971039744

An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances

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