A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
We report a forming-free and self-rectifying unipolar HfOx based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>103@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101336 http://hdl.handle.net/10220/16274 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | We report a forming-free and self-rectifying unipolar HfOx based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>103@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices. |
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