A self-rectifying and forming-free HfOx based-high performance unipolar RRAM

We report a forming-free and self-rectifying unipolar HfOx based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>103@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read...

Full description

Saved in:

Bibliographic Details
Main Authors:	Yu, Hongyu, Tran, Xuan Anh
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/101336 http://hdl.handle.net/10220/16274
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-101336
record_format	dspace
spelling	sg-ntu-dr.10356-1013362020-03-07T13:24:50Z A self-rectifying and forming-free HfOx based-high performance unipolar RRAM Yu, Hongyu Tran, Xuan Anh School of Electrical and Electronic Engineering IEEE International Conference on Solid-State and Integrated Circuit Technology (11th : 2012 : Xi'an, China) DRNTU::Engineering::Electrical and electronic engineering We report a forming-free and self-rectifying unipolar HfOx based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>103@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices. 2013-10-04T06:39:19Z 2019-12-06T20:36:51Z 2013-10-04T06:39:19Z 2019-12-06T20:36:51Z 2012 2012 Conference Paper Yu, H., & Tran, X. A. (2012). A self-rectifying and forming-free HfOx based-high performance unipolar RRAM. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT). https://hdl.handle.net/10356/101336 http://hdl.handle.net/10220/16274 10.1109/ICSICT.2012.6467660 en
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Yu, Hongyu Tran, Xuan Anh A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
description	We report a forming-free and self-rectifying unipolar HfOx based RRAM with high performance. Highlight of the demonstrated RRAM include 1) Fab-available materials and CMOS process, 2) excellent self-rectifying behavior in LRS (>103@ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Yu, Hongyu Tran, Xuan Anh
format	Conference or Workshop Item
author	Yu, Hongyu Tran, Xuan Anh
author_sort	Yu, Hongyu
title	A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
title_short	A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
title_full	A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
title_fullStr	A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
title_full_unstemmed	A self-rectifying and forming-free HfOx based-high performance unipolar RRAM
title_sort	self-rectifying and forming-free hfox based-high performance unipolar rram
publishDate	2013
url	https://hdl.handle.net/10356/101336 http://hdl.handle.net/10220/16274
_version_	1681036815613558784

A self-rectifying and forming-free HfOx based-high performance unipolar RRAM

Similar Items