Thermal analysis of high-powered devices using analytical and experimental methods

Thermal characterization of high power microwave devices is important for determining their reliability. Exceeding the optimal temperature will have a detrimental effect on the performance and reliability of these devices. An accurate closed form analytical solution for predicting the channel temper...

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Main Authors: Ling, Joyce H. L., Tay, Andrew A. O., Choo, Kok Fah
Other Authors: International Conference on Electronic Packaging Technology and High Density Packaging (13th : 2012 : Guilin)
Format: Conference or Workshop Item
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/101339
http://hdl.handle.net/10220/16272
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1013392020-03-07T12:47:14Z Thermal analysis of high-powered devices using analytical and experimental methods Ling, Joyce H. L. Tay, Andrew A. O. Choo, Kok Fah International Conference on Electronic Packaging Technology and High Density Packaging (13th : 2012 : Guilin) Temasek Laboratories Thermal characterization of high power microwave devices is important for determining their reliability. Exceeding the optimal temperature will have a detrimental effect on the performance and reliability of these devices. An accurate closed form analytical solution for predicting the channel temperature in a power amplifier Field Effect Transistors (FETs) or a Monolithic Microwave Integrated Circuits (MMICs) has been presented. Its derivation is based on Green's function integral method on a point heat source developed through method of images. Unlike previous works, the exact location of heat dissipation region is easily taken into account. In addition, present work is easy to implement and reduces the computation time significantly due to absence of double infinite series. This work is also applicable for multiple heat sources by superposition techniques and has been shown to agree well with both the Finite Element Analysis (FEA) and the experimental results. Therefore, this work is useful in predicting the channel temperature in the early stages without having to go through the FEA. Various techniques which are being used to measure temperature of high-power devices are described and its measured temperatures are compared with calculated temperatures using our analytical method. It has been shown that the present work yields result with good accuracy. 2013-10-04T06:33:30Z 2019-12-06T20:36:52Z 2013-10-04T06:33:30Z 2019-12-06T20:36:52Z 2012 2012 Conference Paper Ling, J. H. L., Tay, A. A. O., & Choo, K. F. (2012). Thermal analysis of high-powered devices using analytical and experimental methods. 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging (ICEPT-HDP). https://hdl.handle.net/10356/101339 http://hdl.handle.net/10220/16272 10.1109/ICEPT-HDP.2012.6474902 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description Thermal characterization of high power microwave devices is important for determining their reliability. Exceeding the optimal temperature will have a detrimental effect on the performance and reliability of these devices. An accurate closed form analytical solution for predicting the channel temperature in a power amplifier Field Effect Transistors (FETs) or a Monolithic Microwave Integrated Circuits (MMICs) has been presented. Its derivation is based on Green's function integral method on a point heat source developed through method of images. Unlike previous works, the exact location of heat dissipation region is easily taken into account. In addition, present work is easy to implement and reduces the computation time significantly due to absence of double infinite series. This work is also applicable for multiple heat sources by superposition techniques and has been shown to agree well with both the Finite Element Analysis (FEA) and the experimental results. Therefore, this work is useful in predicting the channel temperature in the early stages without having to go through the FEA. Various techniques which are being used to measure temperature of high-power devices are described and its measured temperatures are compared with calculated temperatures using our analytical method. It has been shown that the present work yields result with good accuracy.
author2 International Conference on Electronic Packaging Technology and High Density Packaging (13th : 2012 : Guilin)
author_facet International Conference on Electronic Packaging Technology and High Density Packaging (13th : 2012 : Guilin)
Ling, Joyce H. L.
Tay, Andrew A. O.
Choo, Kok Fah
format Conference or Workshop Item
author Ling, Joyce H. L.
Tay, Andrew A. O.
Choo, Kok Fah
spellingShingle Ling, Joyce H. L.
Tay, Andrew A. O.
Choo, Kok Fah
Thermal analysis of high-powered devices using analytical and experimental methods
author_sort Ling, Joyce H. L.
title Thermal analysis of high-powered devices using analytical and experimental methods
title_short Thermal analysis of high-powered devices using analytical and experimental methods
title_full Thermal analysis of high-powered devices using analytical and experimental methods
title_fullStr Thermal analysis of high-powered devices using analytical and experimental methods
title_full_unstemmed Thermal analysis of high-powered devices using analytical and experimental methods
title_sort thermal analysis of high-powered devices using analytical and experimental methods
publishDate 2013
url https://hdl.handle.net/10356/101339
http://hdl.handle.net/10220/16272
_version_ 1681041142509993984