Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures
In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter,...
محفوظ في:
| المؤلفون الرئيسيون: | , , , , |
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| مؤلفون آخرون: | |
| التنسيق: | مقال |
| اللغة: | English |
| منشور في: |
2010
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/101350 http://hdl.handle.net/10220/6428 |
| الوسوم: |
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| الملخص: | In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter, charge trapping in nc-Si leads to a shift in capacitance-voltage characteristic (i.e., a change in the flat-band voltage). In contrast, in the former the charge trapping leads to a dramatic reduction in the MOS capacitance. The original capacitance could be recovered after the release of the trapped charges by a small bias, UV light illumination, or low-temperature thermal annealing. |
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