Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures

• المؤلفون الرئيسيون: Gui, D., Ng, Chi Yung, Chen, Tupei, Liu, Yang, Tse, Man Siu
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101350; http://hdl.handle.net/10220/6428
• المؤسسة: Nanyang Technological University

In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter,...