Impact of Lanthanum on positive-bias temperature instability - insight from first-principles simulation

The impact of lanthanum (La) on positive-bias temperature instability (PBTI) is examined via first-principles simulation of the electronic properties of the oxygen vacancy (VO) and vacancy-interstitial (VO-Oi) paired defects in the hafnium dioxide (HfO2) gate dielectric. The purpose is to understand...

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Bibliographic Details
Main Authors: Gu, Chen Jie, Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
Subjects:
Online Access:https://hdl.handle.net/10356/101387
http://hdl.handle.net/10220/18410
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Institution: Nanyang Technological University
Language: English
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