Impact of Lanthanum on positive-bias temperature instability - insight from first-principles simulation
The impact of lanthanum (La) on positive-bias temperature instability (PBTI) is examined via first-principles simulation of the electronic properties of the oxygen vacancy (VO) and vacancy-interstitial (VO-Oi) paired defects in the hafnium dioxide (HfO2) gate dielectric. The purpose is to understand...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101387 http://hdl.handle.net/10220/18410 |
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| Institution: | Nanyang Technological University |
| Language: | English |