A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications

A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications

This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7...

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Main Authors: Kumar, Thangarasu Bharatha, Ma, Kaixue, Yeo, Kiat Seng, Lim, Wei Meng
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/101540
http://hdl.handle.net/10220/16332
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1015402020-03-07T13:24:50Z A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications Kumar, Thangarasu Bharatha Ma, Kaixue Yeo, Kiat Seng Lim, Wei Meng School of Electrical and Electronic Engineering IEEE Asia Pacific Conference on Circuits and Systems (2012 : Kaohsiung, Taiwan) DRNTU::Engineering::Electrical and electronic engineering This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7.2 dB, 3-dB bandwidth of 2.06 GHz, operating frequency of 12 GHz, power consumption of 12 mW using 1.8 V supply voltage and the input referred 1-dB gain compression point of -1.6 dBm. The designed amplifier occupies a die area of 380 μm × 340 μm. Accepted version 2013-10-10T02:26:45Z 2019-12-06T20:40:15Z 2013-10-10T02:26:45Z 2019-12-06T20:40:15Z 2012 2012 Conference Paper Kumar, T. B., Ma, K., Yeo, K. S., & Lim, W. M. (2012). A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications. 2012 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp.180-183. https://hdl.handle.net/10356/101540 http://hdl.handle.net/10220/16332 10.1109/APCCAS.2012.6419001 en © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/APCCAS.2012.6419001]. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Kumar, Thangarasu Bharatha
Ma, Kaixue
Yeo, Kiat Seng
Lim, Wei Meng
A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
description This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7.2 dB, 3-dB bandwidth of 2.06 GHz, operating frequency of 12 GHz, power consumption of 12 mW using 1.8 V supply voltage and the input referred 1-dB gain compression point of -1.6 dBm. The designed amplifier occupies a die area of 380 μm × 340 μm.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Kumar, Thangarasu Bharatha
Ma, Kaixue
Yeo, Kiat Seng
Lim, Wei Meng
format Conference or Workshop Item
author Kumar, Thangarasu Bharatha
Ma, Kaixue
Yeo, Kiat Seng
Lim, Wei Meng
author_sort Kumar, Thangarasu Bharatha
title A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
title_short A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
title_full A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
title_fullStr A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
title_full_unstemmed A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
title_sort 12-ghz high output power amplifier using 0.18µm sige bicmos for low power applications
publishDate 2013
url https://hdl.handle.net/10356/101540
http://hdl.handle.net/10220/16332
_version_ 1681045200867164160

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