A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications

• Main Authors: Kumar, Thangarasu Bharatha, Ma, Kaixue, Yeo, Kiat Seng, Lim, Wei Meng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/101540; http://hdl.handle.net/10220/16332
• Institution: Nanyang Technological University

This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7...