Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons

• المؤلفون الرئيسيون: Lin, Aigu L., Peng, Haiyang, Liu, Zhiqi, Wu, Tom, Su, Chenliang, Loh, Kian Ping, Ariando, Chen, Wei, Wee, Andrew T. S.
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Science::Chemistry
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/101677; http://hdl.handle.net/10220/19751
• المؤسسة: Nanyang Technological University

A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resista...