High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC
Novel on-chip multiport symmetrical transformer that has high self-resonant frequency and good area efficiency is presented. This technique involves the unique way of intercrossing the transformer’s primary and secondary coil using multiple metallization layers. A stacked transformer, with the same...
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Main Authors: | , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2010
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/101957 http://hdl.handle.net/10220/6272 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | Novel on-chip multiport symmetrical transformer that has high self-resonant frequency and good area efficiency is presented. This technique involves the unique way of intercrossing the transformer’s primary and secondary coil using multiple metallization layers. A stacked transformer, with the same area utilization as the proposed device, is selected for performance
comparison. The proposed design has demonstrated a higher self-resonant frequency in differential transmission line transformer configuration, i.e., fd−SRF(Stacked) = 8 GHz and fd−SRF(Sym) = 10.35 GHz. The structure presented is fully compatible
with standard CMOS foundry processes. The silicon data reported in this letter are based on Chartered Semiconductor Manufacturing’s 0.13-μm RFCMOS technology node. |
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