High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC

• Main Authors: Lim, Chee Chong, Yeo, Kiat Seng, Chew, Kok Wai Johnny, Gu, Jiang Min, Cabuk, Alper, Lim, Suh Fei, Boon, Chirn Chye, Qiu, Ping, Do, Manh Anh, Chan, Lap
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/101957; http://hdl.handle.net/10220/6272
• Institution: Nanyang Technological University

Novel on-chip multiport symmetrical transformer that has high self-resonant frequency and good area efficiency is presented. This technique involves the unique way of intercrossing the transformer’s primary and secondary coil using multiple metallization layers. A stacked transformer, with the same area utilization as the proposed device, is selected for performance comparison. The proposed design has demonstrated a higher self-resonant frequency in differential transmission line transformer configuration, i.e., fd−SRF(Stacked) = 8 GHz and fd−SRF(Sym) = 10.35 GHz. The structure presented is fully compatible with standard CMOS foundry processes. The silicon data reported in this letter are based on Chartered Semiconductor Manufacturing’s 0.13-μm RFCMOS technology node.