Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer

Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer

Room-temperature ultraviolet lasing characteristics of ZnO thin-film ridge-waveguide random lasers with MgO capped layer fabricated on n-type s100d Si substrate are reported. It is demonstrated that highly directional emission from the facets of the random lasers can be achieved. Reduction of sca...

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Bibliographic Details
Main Authors: Yu, S. F., Leong, Eunice S. P., Yang, H. Y., Lau, S. P., Chen, N. S., Yuen, Clement, Hng, Huey Hoon
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:https://hdl.handle.net/10356/101962
http://hdl.handle.net/10220/18820
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Institution: Nanyang Technological University
Language: English
Description
Summary:Room-temperature ultraviolet lasing characteristics of ZnO thin-film ridge-waveguide random lasers with MgO capped layer fabricated on n-type s100d Si substrate are reported. It is demonstrated that highly directional emission from the facets of the random lasers can be achieved. Reduction of scattering loss inside the random cavities can also be obtained. In addition, the improvement in the efficiency of the lasing characteristics of the random lasers by optical feedback is studied.

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