Memory devices using a mixture of MoS2 and graphene oxide as the active layer

• المؤلفون الرئيسيون: Yin, Zongyou, Zeng, Zhiyuan, Liu, Juqing, He, Qiyuan, Chen, Peng, Zhang, Hua
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/102270; http://hdl.handle.net/10220/19030
• المؤسسة: Nanyang Technological University

A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, elec...