Memory devices using a mixture of MoS2 and graphene oxide as the active layer

• Main Authors: Yin, Zongyou, Zeng, Zhiyuan, Liu, Juqing, He, Qiyuan, Chen, Peng, Zhang, Hua
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/102270; http://hdl.handle.net/10220/19030
• Institution: Nanyang Technological University

A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, elec...