Memory devices using a mixture of MoS2 and graphene oxide as the active layer

Memory devices using a mixture of MoS2 and graphene oxide as the active layer

A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, elec...

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Main Authors: Yin, Zongyou, Zeng, Zhiyuan, Liu, Juqing, He, Qiyuan, Chen, Peng, Zhang, Hua
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/102270
http://hdl.handle.net/10220/19030
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Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-102270
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spelling sg-ntu-dr.10356-1022702020-06-01T10:13:55Z Memory devices using a mixture of MoS2 and graphene oxide as the active layer Yin, Zongyou Zeng, Zhiyuan Liu, Juqing He, Qiyuan Chen, Peng Zhang, Hua School of Materials Science & Engineering DRNTU::Engineering::Materials A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈102). 2014-03-28T07:16:50Z 2019-12-06T20:52:27Z 2014-03-28T07:16:50Z 2019-12-06T20:52:27Z 2013 2013 Journal Article Yin, Z., Zeng, Z., Liu, J., He, Q., Chen, P., & Zhang, H. (2013). Memory devices using a mixture of MoS2 and graphene oxide as the active layer. Small, 9(5), 727-731. 1613-6810 https://hdl.handle.net/10356/102270 http://hdl.handle.net/10220/19030 10.1002/smll.201201940 en Small © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Yin, Zongyou
Zeng, Zhiyuan
Liu, Juqing
He, Qiyuan
Chen, Peng
Zhang, Hua
Memory devices using a mixture of MoS2 and graphene oxide as the active layer
description A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈102).
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Yin, Zongyou
Zeng, Zhiyuan
Liu, Juqing
He, Qiyuan
Chen, Peng
Zhang, Hua
format Article
author Yin, Zongyou
Zeng, Zhiyuan
Liu, Juqing
He, Qiyuan
Chen, Peng
Zhang, Hua
author_sort Yin, Zongyou
title Memory devices using a mixture of MoS2 and graphene oxide as the active layer
title_short Memory devices using a mixture of MoS2 and graphene oxide as the active layer
title_full Memory devices using a mixture of MoS2 and graphene oxide as the active layer
title_fullStr Memory devices using a mixture of MoS2 and graphene oxide as the active layer
title_full_unstemmed Memory devices using a mixture of MoS2 and graphene oxide as the active layer
title_sort memory devices using a mixture of mos2 and graphene oxide as the active layer
publishDate 2014
url https://hdl.handle.net/10356/102270
http://hdl.handle.net/10220/19030
_version_ 1681057447410663424

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