Memory devices using a mixture of MoS2 and graphene oxide as the active layer

• Main Authors: Yin, Zongyou, Zeng, Zhiyuan, Liu, Juqing, He, Qiyuan, Chen, Peng, Zhang, Hua
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2014
• 主題: DRNTU::Engineering::Materials
• 在線閱讀: https://hdl.handle.net/10356/102270; http://hdl.handle.net/10220/19030

A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, elec...