Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3...

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Main Authors: Wu, Shuxiang, Luo, Xin, Turner, Stuart, Peng, Haiyang, Lin, Weinan, Ding, Junfeng, David, Adrian, Wang, Biao, Van Tendeloo, Gustaaf, Wang, Junling, Wu, Tom
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2014
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Online Access:https://hdl.handle.net/10356/102427
http://hdl.handle.net/10220/18987
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1024272023-02-28T19:42:40Z Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures Wu, Shuxiang Luo, Xin Turner, Stuart Peng, Haiyang Lin, Weinan Ding, Junfeng David, Adrian Wang, Biao Van Tendeloo, Gustaaf Wang, Junling Wu, Tom School of Materials Science & Engineering School of Physical and Mathematical Sciences DRNTU::Engineering::Materials Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices. Published version 2014-03-27T05:39:52Z 2019-12-06T20:54:47Z 2014-03-27T05:39:52Z 2019-12-06T20:54:47Z 2013 2013 Journal Article Wu, S., Luo, X., Turner, S., Peng, H., Lin, W., Ding, J., et al. (2013). Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures. Physical Review X, 3(4), 041027-. 2160-3308 https://hdl.handle.net/10356/102427 http://hdl.handle.net/10220/18987 10.1103/PhysRevX.3.041027 en Physical Review X © 2013 American Physical Society. This paper was published in Physical Review X and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1103/PhysRevX.3.041027]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Wu, Shuxiang
Luo, Xin
Turner, Stuart
Peng, Haiyang
Lin, Weinan
Ding, Junfeng
David, Adrian
Wang, Biao
Van Tendeloo, Gustaaf
Wang, Junling
Wu, Tom
Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures
description Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Wu, Shuxiang
Luo, Xin
Turner, Stuart
Peng, Haiyang
Lin, Weinan
Ding, Junfeng
David, Adrian
Wang, Biao
Van Tendeloo, Gustaaf
Wang, Junling
Wu, Tom
format Article
author Wu, Shuxiang
Luo, Xin
Turner, Stuart
Peng, Haiyang
Lin, Weinan
Ding, Junfeng
David, Adrian
Wang, Biao
Van Tendeloo, Gustaaf
Wang, Junling
Wu, Tom
author_sort Wu, Shuxiang
title Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures
title_short Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures
title_full Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures
title_fullStr Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures
title_full_unstemmed Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures
title_sort nonvolatile resistive switching in pt/laalo3/srtio3 heterostructures
publishDate 2014
url https://hdl.handle.net/10356/102427
http://hdl.handle.net/10220/18987
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