Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures

• المؤلفون الرئيسيون: Wu, Shuxiang, Luo, Xin, Turner, Stuart, Peng, Haiyang, Lin, Weinan, Ding, Junfeng, David, Adrian, Wang, Biao, Van Tendeloo, Gustaaf, Wang, Junling, Wu, Tom
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/102427; http://hdl.handle.net/10220/18987
• المؤسسة: Nanyang Technological University

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3...