Three-region characteristic temperature in p-doped quantum dot lasers
We have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot (QD) lasers with ten layers of QDs in the active region. It is found that the dependence of threshold current density on the temperature within the temperature range from 10 to 90 °C can be divided i...
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sg-ntu-dr.10356-1025002020-03-07T14:00:34Z Three-region characteristic temperature in p-doped quantum dot lasers Cao, Yu-Lian Ji, Hai-Ming Yang, Tao Zhang, Yan-Hua Ma, Wen-Quan Wang, Qi-Jie School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot (QD) lasers with ten layers of QDs in the active region. It is found that the dependence of threshold current density on the temperature within the temperature range from 10 to 90 °C can be divided into three regions by its characteristic temperature (T0): negative, infinite, and positive T0 regions. Furthermore, the T0 region width is dependent on the cavity length: the longer cavity length of the QD lasers correspondingly the wider T0 region. Additionally, for the broad area laser, the threshold modal gains of the lasers with different cavity lengths can be fitted by an empirical expression as a function of the threshold current density, when at the temperatures of 30, 50, and 70 °C. We find that the transparency current density (Jtr) remains almost unchanged under different temperatures according to the extracted parameters from these fitted results, which indicates that Jtr plays an important role in balancing the T0 between negative region and positive one. Published version 2014-03-28T07:27:37Z 2019-12-06T20:55:57Z 2014-03-28T07:27:37Z 2019-12-06T20:55:57Z 2014 2014 Journal Article Cao, Y.-L., Ji, H.-M., Yang, T., Zhang, Y.-H., Ma, W.-Q., & Wang, Q.-J. (2014). Three-region characteristic temperature in p-doped quantum dot lasers. Applied Physics Letters, 104(4), 041102-. https://hdl.handle.net/10356/102500 http://hdl.handle.net/10220/19033 10.1063/1.4862027 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4862027]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Cao, Yu-Lian Ji, Hai-Ming Yang, Tao Zhang, Yan-Hua Ma, Wen-Quan Wang, Qi-Jie Three-region characteristic temperature in p-doped quantum dot lasers |
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We have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot (QD) lasers with ten layers of QDs in the active region. It is found that the dependence of threshold current density on the temperature within the temperature range from 10 to 90 °C can be divided into three regions by its characteristic temperature (T0): negative, infinite, and positive T0 regions. Furthermore, the T0 region width is dependent on the cavity length: the longer cavity length of the QD lasers correspondingly the wider T0 region. Additionally, for the broad area laser, the threshold modal gains of the lasers with different cavity lengths can be fitted by an empirical expression as a function of the threshold current density, when at the temperatures of 30, 50, and 70 °C. We find that the transparency current density (Jtr) remains almost unchanged under different temperatures according to the extracted parameters from these fitted results, which indicates that Jtr plays an important role in balancing the T0 between negative region and positive one. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Cao, Yu-Lian Ji, Hai-Ming Yang, Tao Zhang, Yan-Hua Ma, Wen-Quan Wang, Qi-Jie |
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Article |
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Cao, Yu-Lian Ji, Hai-Ming Yang, Tao Zhang, Yan-Hua Ma, Wen-Quan Wang, Qi-Jie |
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Cao, Yu-Lian |
title |
Three-region characteristic temperature in p-doped quantum dot lasers |
title_short |
Three-region characteristic temperature in p-doped quantum dot lasers |
title_full |
Three-region characteristic temperature in p-doped quantum dot lasers |
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Three-region characteristic temperature in p-doped quantum dot lasers |
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Three-region characteristic temperature in p-doped quantum dot lasers |
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three-region characteristic temperature in p-doped quantum dot lasers |
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2014 |
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https://hdl.handle.net/10356/102500 http://hdl.handle.net/10220/19033 |
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