Three-region characteristic temperature in p-doped quantum dot lasers

• Main Authors: Cao, Yu-Lian, Ji, Hai-Ming, Yang, Tao, Zhang, Yan-Hua, Ma, Wen-Quan, Wang, Qi-Jie
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/102500; http://hdl.handle.net/10220/19033
• Institution: Nanyang Technological University

We have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot (QD) lasers with ten layers of QDs in the active region. It is found that the dependence of threshold current density on the temperature within the temperature range from 10 to 90 °C can be divided i...