Study of modulation doping and ridge height effects in InAs/GaAs quantum dot lasers
Recently, the rapid development of the networks requires fast and stable laser sources. Since quantum dot (QD) lasers are expected to have low threshold current, high characteristic temperature, high material gain, and high differential gain over conventional quantum well (QW) lasers, they have been...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2012
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| Online Access: | https://hdl.handle.net/10356/49506 |
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| Institution: | Nanyang Technological University |
| Language: | English |