Quantitative strain analysis of InAs/GaAs quantum dot materials

• المؤلفون الرئيسيون: Vullum, Per Erik, Nord, Magnus, Vatanparast, Maryam, Thomassen, Sedsel Fretheim, Boothroyd, Chris, Holmestad, Randi, Fimland, Bjørn-Ove, Reenaas, Turid Worren
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Quantum Dots; Quantitative Strain Analysis; DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88146; http://hdl.handle.net/10220/45649

Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...