Quantitative strain analysis of InAs/GaAs quantum dot materials

Quantitative strain analysis of InAs/GaAs quantum dot materials

Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...

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Bibliographic Details
Main Authors: Vullum, Per Erik, Nord, Magnus, Vatanparast, Maryam, Thomassen, Sedsel Fretheim, Boothroyd, Chris, Holmestad, Randi, Fimland, Bjørn-Ove, Reenaas, Turid Worren
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Quantum Dots
Quantitative Strain Analysis
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/88146
http://hdl.handle.net/10220/45649
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/88146
http://hdl.handle.net/10220/45649

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