Electron paramagnetic resonance tagged high-resolution excitation spectroscopy of NV-centers in 4H-SiC

Electron paramagnetic resonance tagged high-resolution excitation spectroscopy of NV-centers in 4H-SiC

We show that electron paramagnetic resonance (EPR) tagged high resolution photoexcitation spectroscopy is a powerful method for the correlation of zero phonon photoluminescence spectra with atomic point defects. Applied to the case of NV centers in 4H-SiC it allows to associate the photoluminescence...

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書目詳細資料
Main Authors:	Zargaleh, Soroush Abbasi, von Bardeleben, H. J., Cantin, J. L., Gerstmann, U., Hameau, S., Eblé, B., Gao, Weibo
其他作者:	School of Physical and Mathematical Sciences
格式:	Article
語言:	English
出版:	2019
主題:	DRNTU::Science::Physics Defects Fine & Hyperfine Structure
在線閱讀:	https://hdl.handle.net/10356/102648 http://hdl.handle.net/10220/47783
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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