Environment of the Pbcenter at the Si(111)/oxide interface

Environment of the Pbcenter at the Si(111)/oxide interface

10.1007/BF00203603

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Bibliographic Details
Main Authors: Ong, C.K., Harker, A.H., Stoneham, A.M.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
computer simulation
defects
hyperfine interactions
oxidation
Silicon
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96502
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/96502

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