Environment of the Pbcenter at the Si(111)/oxide interface
10.1007/BF00203603
Saved in:
Main Authors: | Ong, C.K., Harker, A.H., Stoneham, A.M. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/96502 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Electron paramagnetic resonance tagged high-resolution excitation spectroscopy of NV-centers in 4H-SiC
by: Zargaleh, Soroush Abbasi, et al.
Published: (2019) -
Interface Engineering and Emergent Phenomena in Oxide Heterostructures
by: Huang, Zhen, et al.
Published: (2020) -
Experimental Determination of the Nuclear Magnetic Octupole Moment of 137Ba
by: NICHOLAS CHARLES LEWTY
Published: (2014) -
Adsorption of O 2 and CO 2 on the Si(111)-7 × 7 surfaces
by: Wang, S., et al.
Published: (2014) -
Structural and electrical characterisations of rapid thermal annealed thin silicon oxide films on silicon
by: Chan, Y.M., et al.
Published: (2014)