Electron paramagnetic resonance tagged high-resolution excitation spectroscopy of NV-centers in 4H-SiC

• المؤلفون الرئيسيون: Zargaleh, Soroush Abbasi, von Bardeleben, H. J., Cantin, J. L., Gerstmann, U., Hameau, S., Eblé, B., Gao, Weibo
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: DRNTU::Science::Physics; Defects; Fine & Hyperfine Structure
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/102648; http://hdl.handle.net/10220/47783
• المؤسسة: Nanyang Technological University

We show that electron paramagnetic resonance (EPR) tagged high resolution photoexcitation spectroscopy is a powerful method for the correlation of zero phonon photoluminescence spectra with atomic point defects. Applied to the case of NV centers in 4H-SiC it allows to associate the photoluminescence...