AlN-AlN layer bonding and it's thermal characteristics
Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially ox...
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Main Authors: | , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2015
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/103772 http://hdl.handle.net/10220/25898 |
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Institution: | Nanyang Technological University |
Language: | English |
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