AlN-AlN layer bonding and it's thermal characteristics

• المؤلفون الرئيسيون: Shuyu, Bao, Lee, Kwang Hong, Chong, Gang Yih, Fitzgerald, Eugene A., Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Science::Physics::Atomic physics::Solid state physics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/103772; http://hdl.handle.net/10220/25898

Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially ox...