Band alignment between GaN and ZrO2 formed by atomic layer deposition
The band alignment between Ga-face GaN and atomic-layer-deposited ZrO2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO2 layer. Based...
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| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105073 http://hdl.handle.net/10220/20376 http://dx.doi.org/10.1063/1.4890470 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The band alignment between Ga-face GaN and atomic-layer-deposited ZrO2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO2 layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE V of 1 ± 0.2 eV and conduction band discontinuity ΔE C of 1.2 ± 0.2 eV at ZrO2/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO2 layer into account. |
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