Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors

• المؤلفون الرئيسيون: Ng, C. W., Wang, H.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/105209; http://hdl.handle.net/10220/17071; http://dx.doi.org/10.1002/pssa.201127699

In this work, the temperature-dependent DC performance of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an InP/InAlAs composite emitter was characterized. The current transport mechanisms in DHBTs with a type-I InAlAs/GaAsSb emitter–base junction interface and a type-II GaAsSb/In...