Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors

Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors

In this work, the temperature-dependent DC performance of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an InP/InAlAs composite emitter was characterized. The current transport mechanisms in DHBTs with a type-I InAlAs/GaAsSb emitter–base junction interface and a type-II GaAsSb/In...

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書目詳細資料
Main Authors:	Ng, C. W., Wang, H.
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/105209 http://hdl.handle.net/10220/17071 http://dx.doi.org/10.1002/pssa.201127699
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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