InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy

• Main Authors: Fitzgerald, Eugene A., Liang, Y. Y., Ngo, C. Y., Yoon, Soon Fatt, Loke, Wan Khai
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/105229; http://hdl.handle.net/10220/17644; http://dx.doi.org/10.1002/pssc.201100261
• Institution: Nanyang Technological University

InAs/GaAs quantum dots (QDs) on GeOI were grown at various growth temperatures and in-depth photoluminescence study was conducted to characterize the optical properties of QDs on GeOI. InAs QDs with room temperature emission of 1.26 μm and areal density of 4.8 × 1010 cm-2 were obtained. It was shown that high QD growth temperature helps to promote uniform dot size distribution but In-Ga intermixing may lead to excessive thermal escape of carriers. Photoluminescence studies suggest that QDs on GeOI have good optical quality but with small amount of defects, acting as non-radiative recombination centers.