Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

• Main Authors: Lee, Kwang Hong, Bao, Shuyu, Chong, Gang Yih, Tan, Yew Heng, Fitzgerald, Eugene A., Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/106983; http://hdl.handle.net/10220/25276; http://dx.doi.org/10.1063/1.4905487
• Institution: Nanyang Technological University

A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressur...