Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer

• المؤلفون الرئيسيون: Lee, Kwang Hong, Bao, Shuyu, Chong, Gang Yih, Tan, Yew Heng, Fitzgerald, Eugene A., Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Science::Physics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/107093; http://hdl.handle.net/10220/25327; http://dx.doi.org/10.1063/1.4895487
• المؤسسة: Nanyang Technological University

A scalable method to fabricate germanium on insulator (GOI) substrate through epitaxy, bonding, and layer transfer is reported. The germanium (Ge) epitaxial film is grown directly on a silicon (Si) (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour depositio...