Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer

• Main Authors: Lee, Kwang Hong, Bao, Shuyu, Chong, Gang Yih, Tan, Yew Heng, Fitzgerald, Eugene A., Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/107093; http://hdl.handle.net/10220/25327; http://dx.doi.org/10.1063/1.4895487
• Institution: Nanyang Technological University

A scalable method to fabricate germanium on insulator (GOI) substrate through epitaxy, bonding, and layer transfer is reported. The germanium (Ge) epitaxial film is grown directly on a silicon (Si) (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour depositio...