Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressur...

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Bibliographic Details
Main Authors: Lee, Kwang Hong, Bao, Shuyu, Chong, Gang Yih, Tan, Yew Heng, Fitzgerald, Eugene A., Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
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Online Access:https://hdl.handle.net/10356/106983
http://hdl.handle.net/10220/25276
http://dx.doi.org/10.1063/1.4905487
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Institution: Nanyang Technological University
Language: English

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