Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient
A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressur...
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sg-ntu-dr.10356-1069832019-12-06T22:22:25Z Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient Lee, Kwang Hong Bao, Shuyu Chong, Gang Yih Tan, Yew Heng Fitzgerald, Eugene A. Tan, Chuan Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001) handle wafer to form a germanium-on-insulator (GOI) substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 106 cm−2. Published version 2015-03-27T07:05:59Z 2019-12-06T22:22:25Z 2015-03-27T07:05:59Z 2019-12-06T22:22:25Z 2015 2015 Journal Article Lee, K. H., Bao, S., Chong, G. Y., Tan, Y. H., Fitzgerald, E. A., & Tan, C. S. (2015). Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient. APL materials, 3(1), 016102-. 2166-532X https://hdl.handle.net/10356/106983 http://hdl.handle.net/10220/25276 http://dx.doi.org/10.1063/1.4905487 en APL Materials © 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. 8 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Lee, Kwang Hong Bao, Shuyu Chong, Gang Yih Tan, Yew Heng Fitzgerald, Eugene A. Tan, Chuan Seng Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
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A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001) handle wafer to form a germanium-on-insulator (GOI) substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 106 cm−2. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Lee, Kwang Hong Bao, Shuyu Chong, Gang Yih Tan, Yew Heng Fitzgerald, Eugene A. Tan, Chuan Seng |
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Article |
author |
Lee, Kwang Hong Bao, Shuyu Chong, Gang Yih Tan, Yew Heng Fitzgerald, Eugene A. Tan, Chuan Seng |
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Lee, Kwang Hong |
title |
Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
title_short |
Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
title_full |
Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
title_fullStr |
Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
title_full_unstemmed |
Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
title_sort |
defects reduction of ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
publishDate |
2015 |
url |
https://hdl.handle.net/10356/106983 http://hdl.handle.net/10220/25276 http://dx.doi.org/10.1063/1.4905487 |
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1681041855193546752 |