History dependent magnetoresistance in lightly doped La2−xSrxCuO4 thin films
The in-plane magnetoresistance (MR) in atomically smooth La2−xSrxCuO4 thin films grown by molecular-beam-epitaxy was measured in magnetic fields B up to 9 T over a wide range of temperatures T. The films, with x=0.03 and x=0.05, are insulating, and the positive MR emerges at . The positive MR exhibi...
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Main Authors: | , , , , , |
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格式: | Article |
語言: | English |
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2013
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在線閱讀: | https://hdl.handle.net/10356/105385 http://hdl.handle.net/10220/17553 http://dx.doi.org/10.1016/j.physb.2012.01.063 |
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機構: | Nanyang Technological University |
語言: | English |