History dependent magnetoresistance in lightly doped La2−xSrxCuO4 thin films

• Main Authors: Shi, Xiaoyan, Popović, Dragana, Panagopoulos, Christos, Logvenov, G., Bollinger, A. T., Božović, I.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/105385; http://hdl.handle.net/10220/17553; http://dx.doi.org/10.1016/j.physb.2012.01.063
• Institution: Nanyang Technological University

The in-plane magnetoresistance (MR) in atomically smooth La2−xSrxCuO4 thin films grown by molecular-beam-epitaxy was measured in magnetic fields B up to 9 T over a wide range of temperatures T. The films, with x=0.03 and x=0.05, are insulating, and the positive MR emerges at . The positive MR exhibi...