Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks

We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the 3E→3A2 intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the NV−center in 3C-SiC has...

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Main Authors: Zargaleh, Soroush Abbasi, Hameau, S., Eble, B., Margaillan, F., von Bardeleben, H. J., Cantin, J. L., Gao, Weibo
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2019
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Online Access:https://hdl.handle.net/10356/105497
http://hdl.handle.net/10220/47407
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1054972023-02-28T19:43:07Z Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks Zargaleh, Soroush Abbasi Hameau, S. Eble, B. Margaillan, F. von Bardeleben, H. J. Cantin, J. L. Gao, Weibo School of Physical and Mathematical Sciences The Photonics Institute Centre for Disruptive Photonic Technologies (CDPT) Photonic Quantum Networks Nitrogen Vacancy Center DRNTU::Science::Physics We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the 3E→3A2 intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the NV−center in 3C-SiC has a ZPL line at 1.468 μm in excellent agreement with theoretical predictions. The ZPL line can be observed up to T=100 K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin S=1 ground state and a spin S=1 excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at 1.5μm, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics. Published version 2019-01-07T08:00:47Z 2019-12-06T21:52:30Z 2019-01-07T08:00:47Z 2019-12-06T21:52:30Z 2018 Journal Article Zargaleh, S. A., Hameau, S., Eble, B., Margaillan, F., von Bardeleben, H. J., Cantin, J. L., & Gao, W. (2018). Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks. Physical Review B, 98(16), 165203-. doi:10.1103/PhysRevB.98.165203 https://hdl.handle.net/10356/105497 http://hdl.handle.net/10220/47407 10.1103/PhysRevB.98.165203 en Physical Review B © 2018 American Physical Society (APS). All rights reserved. This paper was published in Physical Review B and is made available with permission of American Physical Society (APS). 5 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Photonic Quantum Networks
Nitrogen Vacancy Center
DRNTU::Science::Physics
spellingShingle Photonic Quantum Networks
Nitrogen Vacancy Center
DRNTU::Science::Physics
Zargaleh, Soroush Abbasi
Hameau, S.
Eble, B.
Margaillan, F.
von Bardeleben, H. J.
Cantin, J. L.
Gao, Weibo
Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks
description We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the 3E→3A2 intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the NV−center in 3C-SiC has a ZPL line at 1.468 μm in excellent agreement with theoretical predictions. The ZPL line can be observed up to T=100 K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin S=1 ground state and a spin S=1 excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at 1.5μm, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Zargaleh, Soroush Abbasi
Hameau, S.
Eble, B.
Margaillan, F.
von Bardeleben, H. J.
Cantin, J. L.
Gao, Weibo
format Article
author Zargaleh, Soroush Abbasi
Hameau, S.
Eble, B.
Margaillan, F.
von Bardeleben, H. J.
Cantin, J. L.
Gao, Weibo
author_sort Zargaleh, Soroush Abbasi
title Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks
title_short Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks
title_full Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks
title_fullStr Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks
title_full_unstemmed Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks
title_sort nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks
publishDate 2019
url https://hdl.handle.net/10356/105497
http://hdl.handle.net/10220/47407
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