Thermal reversible breakdown and resistivity switching in hafnium dioxide

• Main Authors: Migas, D. B., Danilyuk, A. L., Borisenko, Victor E., Wu, X., Raghavan, N., Danilyuk, M. A., Pey, K. L.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/106280; http://hdl.handle.net/10220/23997; http://jnep.sumdu.edu.ua/en/component/content/full_article/350
• Institution: Nanyang Technological University

We present a model of thermal reversible breakdown via conductive filaments (CFs) in hafnium dioxide (HfO2). These CFs appear as a result of electrical pretreatment of a metal/HfO 2/metal (semiconductor) nanostructure (MIM(S)). The model is based on an assumption that the thermal reversible breakdow...