A time-delay-integration CMOS image sensor with pipelined charge transfer architecture

A time-delay-integration CMOS image sensor with pipelined charge transfer architecture

In this paper, we report a novel Time-Delay-Integration (TDI) CMOS image sensor for low-earth orbit (LEO) nano-satellite imaging application, where limited exposure time and unexpected flight fluctuations are major design challenges. The sensor features programmable integration time per stage, dynam...

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Bibliographic Details
Main Authors: Yu, Hang, Qian, Xinyuan, Chen, Shoushun, Low, Kay-Soon
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Mechanical engineering::Machine design and construction
Online Access:https://hdl.handle.net/10356/106522
http://hdl.handle.net/10220/17624
http://dx.doi.org/10.1109/ISCAS.2012.6271566
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this paper, we report a novel Time-Delay-Integration (TDI) CMOS image sensor for low-earth orbit (LEO) nano-satellite imaging application, where limited exposure time and unexpected flight fluctuations are major design challenges. The sensor features programmable integration time per stage, dynamic charge transfer path and tunable well capacity. A prototype chip of 1536×8 pixels was implemented using TSMC 0.18µm CMOS image sensor process. Photodiode and other transistors are floor-planned in different arrays, providing small pixel pitch of 3.25µm and high fill factor of 57%.

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