A time-delay-integration CMOS image sensor with pipelined charge transfer architecture

A time-delay-integration CMOS image sensor with pipelined charge transfer architecture

In this paper, we report a novel Time-Delay-Integration (TDI) CMOS image sensor for low-earth orbit (LEO) nano-satellite imaging application, where limited exposure time and unexpected flight fluctuations are major design challenges. The sensor features programmable integration time per stage, dynam...

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Main Authors: Yu, Hang, Qian, Xinyuan, Chen, Shoushun, Low, Kay-Soon
其他作者: School of Electrical and Electronic Engineering
格式: Conference or Workshop Item
語言:English
出版: 2013
主題:
DRNTU::Engineering::Mechanical engineering::Machine design and construction
在線閱讀:https://hdl.handle.net/10356/106522
http://hdl.handle.net/10220/17624
http://dx.doi.org/10.1109/ISCAS.2012.6271566
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總結:In this paper, we report a novel Time-Delay-Integration (TDI) CMOS image sensor for low-earth orbit (LEO) nano-satellite imaging application, where limited exposure time and unexpected flight fluctuations are major design challenges. The sensor features programmable integration time per stage, dynamic charge transfer path and tunable well capacity. A prototype chip of 1536×8 pixels was implemented using TSMC 0.18µm CMOS image sensor process. Photodiode and other transistors are floor-planned in different arrays, providing small pixel pitch of 3.25µm and high fill factor of 57%.

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